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standard speed igbt insulated gate bipolar transistor e c g n-channel features ? standard: optimized for minimum saturation voltage and low operating frequencies (< 1khz) ? lead-free, rohs compliant ? automotive qualified * ? typical applications: ptc heater, discharge switch & relay replacements benefits v ces = 600v v ce(on) typ. = 1.4v @v ge = 15v, i c = 18a 12/03/10 www.irf.com 1 d 2 pak AUIRG4BC30S-S automotive grade absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25 c, unless otherwise specified parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 34 i c @ t c = 100c continuous collector current 18 a i cm pulsed collector current 68 i lm clamped inductive load current 68 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 10 mj p d @ t c = 25c maximum power dissipation 100 p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) w parameter typ. max. units r jc junction-to-case ??? 1.2 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient, typical socket mount ??? 40 wt weight 1.44 ??? g (oz) thermal resistance gc e gate collector emitter * when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. to-262 AUIRG4BC30S-Sl AUIRG4BC30S-S AUIRG4BC30S-Sl pd - 96340

2 www.irf.com notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature (see fig. 13b). v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 23 ? , (see fig. 13a). repetitive rating; pulse width limited by maximum junction temperature. pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ? ? v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.75 ? v/c v ge = 0v, i c = 1.0ma ? 1.40 1.6 i c = 18a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 1.84 ? i c = 34a see fig. 2, 5 ? 1.45 ? i c = 18a , t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 6.0 11 ? s v ce = 100v, i c = 18a ? ? 250 v ge = 0v, v ce = 600v ? ? 2.0 v ge = 0v, v ce = 10v, t j = 25c ? ? 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current a parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 50 75 i c = 18a q ge gate - emitter charge (turn-on) ? 7.3 11 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 17 26 v ge = 15v t d(on) turn-on delay time ? 22 ? t r rise time ? 18 ? t j = 25c t d(off) turn-off delay time ? 540 810 i c = 18a, v cc = 480v t f fall time ? 390 590 v ge = 15v, r g = 23 ? e on turn-on switching loss ? 0.26 ? energy losses include "tail" e off turn-off switching loss ? 3.45 ? mj see fig. 9, 10, 14 e ts total switching loss ? 3.71 5.6 t d(on) turn-on delay time ? 21 ? t j = 150c, t r rise time ? 19 ? i c = 18a, v cc = 480v t d(off) turn-off delay time ? 790 ? v ge = 15v, r g = 23 ? t f fall time ? 760 ? energy losses include "tail" e ts total switching loss ? 6.55 ? mj see fig. 11, 14 l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 1100 ? v ge = 0v c oes output capacitance ? 72 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 13 ? ? = 1.0mhz switching characteristics @ t j = 25c (unless otherwise specified) ns ns

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" qualification information ? d 2 pak msl1 ??? (per ipc/jedec j-std-020) to-262 n/a rohs compliant yes esd machine model class m4 (400v) aec-q101-002 human body model class h1c (2000v) aec-q101-001 charged device model class c5 (1000v) aec-q101-005 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level

4 www.irf.com fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o 0.1 1 10 100 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o
0 10 20 30 40 50 0.1 1 10 100 f, frequency (khz) a 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: i clamp voltage: 80% of rated power dissipation = w

www.irf.com 5 fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 9 c i = a 18 c i = a 36 c 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

6 www.irf.com fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = 23ohm v = 15v v = 480v g ge cc i = a 36 c i = a 18 c i = a 9 c ? 1 10 100 0 500 1000 1500 2000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 18a cc c 0 10 20 30 40 50 3.60 3.64 3.68 3.72 3.76 3.80 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 18a cc ge j c ?

www.irf.com 7 fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 0 10 20 30 40 50 0.0 3.0 6.0 9.0 12.0 15.0 i , collector-to-emitter current (a) total switching losses (mj) c r = 23ohm t = 150 c v = 480v v = 15v g j cc ge ? 1 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area

8 www.irf.com d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l ig. 14a - switching loss test circuit driver same type as d.u.t., vc = 480v 0 - vcc r l icm vcc = 480f pulsed collector current test circuit

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10 www.irf.com to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches)

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www.irf.com 11 & '( dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

12 www.irf.com ordering information base p art number packa g e standard pack com p lete part number form quantit y AUIRG4BC30S-Sl to-262 tube 50 AUIRG4BC30S-Sl AUIRG4BC30S-S d2pak tube 50 AUIRG4BC30S-S tape and reel left 800 auirg4bc30sstrl tape and reel right 800 auirg4bc30sstrr

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